Layout design to minimize voltage-dependent variation on input capacitance of an analog ESD protection circuit

نویسندگان

  • Ming-Dou Ker
  • Tung-Yang Chen
چکیده

A design model to find the optimized device dimensions and layout spacings on the input ESD clamp devices is developed in this work to keep the total input capacitance almost constant, even if the analog signal has a varying input voltage. An analog ESD protection circuit has been designed to solve ESD protection challenge on the analog pins for highfrequency applications. The device dimension (W=L) of ESD protection device connected to the I/O pad can be reduced to only 50 mm/0.5 mm in a 0.35-mm silicided CMOS process, but it can sustain HBM (MM) ESD level up to 6 kV (400V). With such a smaller device dimension, the input capacitance of this analog ESD protection circuit can be significantly reduced to only B0.4 pF for high-frequency applications. This input capacitance can be further reduced if the ESD protection devices are designed with smaller device dimensions. Moreover, by using the optimized layout design to draw the layout of ESD protection NMOS and PMOS devices, the voltage-dependent variation on input capacitance of this analog ESD protection circuit can be kept below 1% under an input voltage swing of 1V. With such almost constant input capacitance, the nonlinear distortion causing by on-chip ESD protection circuit can be minimized for high-precision applications. r 2002 Elsevier Science B.V. All rights reserved.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Design on ESD Protection Circuit with Very Low and Constant Input Capacitance

Research Motivation Effective on-chip ESD design to solve the ESD protection challenge on the analog pins for highfrequency or current-mode applications is studied. The device dimension of ESD clamp devices in analog ESD protection circuit can be reduced to have a much small input capacitance for high-frequency applications, but it can still sustain a high HBM and MM ESD level. To find the opti...

متن کامل

Low-Capacitance and Fast Turn-on SCR for RF ESD Protection

With the smaller layout area and parasitic capacitance under the same electrostatic discharge (ESD) robustness, silicon-controlled rectifier (SCR) has been used as an effective on-chip ESD protection device in radio-frequency (RF) IC. In this paper, SCR's with the waffle layout structures are studied to minimize the parasitic capacitance and the variation of the parasitic capacitance within ult...

متن کامل

Esd Protection Design for Rf Circuits in Cmos Technology with Low-c Implementation

To mitigate the radio-frequency (RF) performance degradation caused by electrostatic discharge (ESD) protection device, low capacitance (low-C) design on ESD protection device is a solution. With the smaller layout area and small parasitic capacitance under the same ESD robustness, silicon-controlled rectifier (SCR) device has been used as an effective on-chip ESD protection device in RF ICs. I...

متن کامل

On-Chip ESD Protection Design for GHz RF Integrated Circuits by Using Polysilicon Diodes in sub-quarter-micron CMOS Process

ESD protection in RF integrated circuits has several considerations: low parasitic capacitance, constant input capacitance, and insensitive to substrate coupling noise. In this paper, a new ESD protection design with polysilicon diodes for RF IC applications is proposed and characterized. The proposed polysilicon diode is constructed by polysilicon layer in a general CMOS process with a central...

متن کامل

10.5 Broadband ESD Protection Circuits in CMOS Technology

As device dimensions scale down and the operating speed of integrated circuits scales up, electrostatic discharge (ESD) proves an increasingly more critical issue. With hundreds of gigahertz I/O pads in typical data communication circuits, microprocessors, and memories, both the voltage tolerance and the area of ESD protection devices become important design parameters. It is possible to use in...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2001